Temporal Localized Structures in mode-locked Vertical External-Cavity Surface-Emitting Lasers

Temporal Localized States (TLSs) are individually addressable structures traveling in optical resonators. They can be used as bits of information and to generate frequency combs with tunable spectral density. We show that a pair of specially designed nonlinear mirrors, a 1/2 Vertical-Cavity Surface-Emitting Laser and a Semiconductor Saturable Absorber, coupled in self-imaging conditions, can lead to the generation of such TLSs. Our results indicate how a conventional passive mode- locking scheme can be adapted to provide a robust and simple system emitting TLSs and it paves the way towards the observation of three dimensions confined states, the so-called light bullets.Comment: submission to Optics Letter

175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser

We report a harmonically mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses at a repetition frequency of 175 GHz with an average output power of 300 mW. Harmonic mode-locking was established using a 300 µm thick intracavity single crystal diamond heat spreader in thermal contact with the front surface of the gain sample using liquid capillary bonding. The repetition frequency was set by the diamond microcavity and stable harmonic mode locking was achieved when the laser cavity length was tuned so that the laser operated on the 117th harmonic of the fundamental cavity. When an etalon placed intracavity next to the gain sample, but not in thermal contact was used pulse groups were observed. These contained 300 fs pulses with a spacing of 5.9 ps. We conclude that to achieve stable harmonic mode locking at repetition frequencies in the 100s of GHz range in a VECSEL there is a threshold pulse energy above which harmonic mode locking is achieved and below which groups of pulses are observed

QUESADA, ELENA E HIJA [Material gráfico]

Copia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

RETRATO SIN IDENTIFICAR [Material gráfico]

Copia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201

Vertical-external-cavity semiconductor lasers

Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. The purpose of this Topical Review is to outline the operating principles of these versatile lasers and summarize the capabilities of devices that have been demonstrated so far. Particular attention is paid to the generation of near-transform-limited sub-picosecond pulses in passively mode-locked surface-emitting lasers, which are potentially of interest as compact sources of ultrashort pulses at high average power that can be operated readily at repetition rates of many gigahertz

Broad continuous tunable range with single frequency Sb-based external-cavity VCSEL emitting in MIR

International audienc

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm

International audienceThe growth conditions and the operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.3μm in an external cavity configuration are reported. The epitaxial structure was grown in two steps on a GaSb substrate by molecular beam epitaxy. It is made of a GaSb/AlAsSb Bragg reflector, a GaInAsSb/AlGaAsSb multi quantum-well active region and an AlAsSb heatspreader layer. A TEM00 low-divergence laser continuous wave mode operation was demonstrated from 277K up to 350K. A characteristic temperature T0 as high as 74K was measured just below 300K. Threshold incident pump power as low as 600 W/cm2 at 277K and a maximum output power of 8.5mW at 288K was observed

Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 μm : Application to water and carbon dioxide

International audienceA diode pumped Vertical Cavity Surface Emitting Laser emitting at 2.3 μm has been developed to extend the near infrared spectral region accessible for Intracavity Laser Absorption Spectroscopy. The achieved sensitivity onthe order of αmin ∼ 1.5 × 10-9 cm-1 (or 3 × 10-10 cm-1/Hz), has allowed detecting water and carbon dioxide lines with an intensity as low as 10-27 and 2 x 10-28 cm/molecule, respectively. The first detection of the 31104-00001 band of 13C16O2and of a number of transitions of the 31104-00001 and 40005-01101e bands of 12C16O2 is reported together with their rotational analysis